J. Du Port de Pontcharra: search on Z-Library

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1

Analysis of GeH4 and GeF4 as gaseous feed materials for germanium implantation

A Ferreiro, J du Port de Pontcharra, C Jaussad, E Lora-Tamayo

Journal:

Year:

1989

Language:

english

File:

PDF, 295 KB

english, 1989

2

Long-term follow-up of a randomized controlled trial on additional core stability exercises training for improving dynamic sitting balance and trunk control in stroke patients

Cabanas-Valdés, Rosa, Bagur-Calafat, Caritat, Girabent-Farrés, Montserrat, Caballero-Gómez, Fernanda Mª, du Port de Pontcharra-Serra, Helena, German-Romero, Ana, Urrútia, Gerard

Journal:

Clinical Rehabilitation

Year:

2017

Language:

english

File:

PDF, 565 KB

english, 2017

3

CMOS/SOI technologies for low-power and low-voltage circuits

J.L. Pelloie, C. Raynaud, O. Faynot, A. Grouillet, J. Du Port de Pontcharra

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 631 KB

english, 1999

4

Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures; effects of ionizing radiation

N Fourches, Ph Abbon, R Chipaux, E Delagnes, E Orsier, P Pailler, J du Port de Pontcharra, M Rouger, M Sueur, R Truche

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1997

Language:

english

File:

PDF, 889 KB

english, 1997

5

Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

Ferlet-Cavrois, V., Gasiot, G., Marcandella, C., D'Hose, C., Flament, O., Faynot, O., du Port de Pontcharra, J., Raynaud, C.

Journal:

IEEE Transactions on Nuclear Science

Year:

2002

Language:

english

File:

PDF, 652 KB

english, 2002

6

Study of transient current induced by heavy-ion in NMOS/SOI transistors

Colladant, T., Flament, O., L'Hoir, A., Ferlet-Cavrois, V., D'Hose, C., du Port de Pontcharra, J.

Journal:

IEEE Transactions on Nuclear Science

Year:

2002

Language:

english

File:

PDF, 342 KB

english, 2002

7

[IEEE 2000 IEEE International SOI Conference. Proceedings - Wakefield, MA, USA (2-5 Oct. 2000)] 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) - Extraction of the main current components of floating-body partially-depleted SOI devices

Fenouillet-Beranger, C., Raynaud, C., Faynot, O., Grouillet, A., Du Port de Pontcharra, J., Tabone, C., Pelloie, J.L.

Year:

2000

Language:

english

File:

PDF, 151 KB

english, 2000

8

[IEEE 2001 IEEE International SOI Conference. Proceedings - Durango, CO, USA (1-4 Oct. 2001)] 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) - Characterization and simulation of STI isolation for 0.1 μm partially-depleted SOI devices

Fenouillet-Beranger, C., Faynot, O., Tabone, C., Colladant, T., Ferlet, V., Jahan, C., du Port de Pontcharra, J., Lecarval, G., Pelloie, J.L.

Year:

2001

Language:

english

File:

PDF, 301 KB

english, 2001

9

SEU sensitivity of bulk and SOE technologies to 14-MeV neutrons

Gasiot, G., Ferlet-Cavrois, V., Baggio, J., Roche, P., Flatresse, P., Guyot, A., Morel, P., Bersillon, O., du Port de Pontcharra, J.

Journal:

IEEE Transactions on Nuclear Science

Year:

2002

Language:

english

File:

PDF, 663 KB

english, 2002

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